A Dramatic Improvement in Electron Mobility by Using an Ultra-thin, Single-Crystalline Film of Germanium



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Cross- sectional TEM image of Ge ultra-thin film (left) and sheet electron density reliance of electron mobility in Ge thin movies (right)

The scientists have actually established a technique for making a consistent ultra-thin film of germanium (Ge) in between 2 insulating layers. They have actually likewise found that electron mobility extremely enhanced when density of the consistent ultra-thin Ge film was thinned listed below 10 nm.

NewResults

The scientists have actually established a semiconductor transfer technology for making thin single-crystalline movies of Ge with the density listed below 10 nm. Lattice matched epitaxial development and selective etching were advanced and made use of. Contrary to good sense on semiconductors, electron mobility substantially increased as the density of the single-crystalline film of Ge was thinned. This might be credited to modulation of Ge energy band structure.

Background

In order to decrease power usage, research study and advancement of Ge transistors have actually been pressed. As Ge transistors have greater electron and hole mobility than that of silicon, running voltage of Ge transistors can be reduced. However, high-performance Ge transistors still can not be understood in mass production owing to the absence of premium single-crystalline thin movies of Ge.

FuturePlan

In order to understand high efficiency ultra-low power usage Ge- LSIs, the scientists will develop a more accurate thin-film forming procedure to enhance mobility and clarify the system behind the freshly found phenomenon.

Source: NationalInstitute of Advanced Industrial Science and Technology

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